Thermal low k dielectrics
AssigneeLSI Logic Corporation
InventorsCharles E. May, Derryl D.J. Allman
Life of this patent
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Abstract
An integrated circuit having an electrically insulating layer of an electrically nonconductive material, where the electrically insulating layer is disposed between at least two electrically conductive elements. The electrically nonconductive material is selected from a group of materials having a k value that decreases when subjected to thermal treatment. The electrically nonconductive material is most preferably a boro siloxane.
Claims20
In an integrated circuit, the improvement comprising an electrically insulating layer of an electrically nonconductive material, disposed between at least two electrically conductive elements, the electrically nonconductive material selected from a group of materials having a k value that decreases when subjected to thermal treatment.
In a method of forming an integrated circuit, the improvement comprising:
- forming an electrically insulating layer of an electrically nonconductive material between at least two electrically conductive elements, the electrically nonconductive material selected from a group of materials having a k value that decreases when subjected to thermal treatment, and
- thermally treating the electrically nonconductive material to reduce the k value.
Dependencies are inferred from the claim text.