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US 2003/0170969 A1Published application
Semiconductor processing employing a semiconducting spacer
AssigneeAdvanced Micro Devices, Inc.
InventorsEMI ISHIDA, SCOTT LUNING
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Abstract
A semiconductor device is provided with semiconducting sidewall spacers used in the formation of source/drain regions. The semiconducting sidewall spacers also reduce the possibility of silicide shorting through shallow source/drain junctions. Embodiments include doping the semiconducting sidewall spacers so that they serve as a source of impurities for forming source/drain extensions during activation annealing.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a dielectric layer formed on the semiconductor substrate;
- a gate electrode having an upper surface and side surfaces formed on the dielectric layer;
- first sidewall spacers formed on the side surfaces of the gate electrode;
- and
- second sidewall spacers, comprising a semiconducting material, formed on the first sidewall spacers.
3 more elements
A method of manufacturing a CMOS semiconductor device, which method comprises:
- forming a dielectric layer on a surface of a semiconductor substrate;
- forming a conductive layer on the dielectric layer;
- patterning the conductive layer to form a gate electrode having an upper surface and side surfaces;
- depositing an insulating layer;
- etching the insulating layer to form first sidewall spacers on the side surfaces of the gate electrode;
- depositing a semiconducting layer;
- and
- etching the semiconducting layer to form second sidewall spacers on the first sidewall spacers.
5 more elements
Dependencies are inferred from the claim text.