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US 2003/0170967 A1Published application
Process for fabricating a semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsKotaro Kataoka, Hiroshi Iwata, Masayuki Nakano
Life of this patent
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Abstract
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.
Claims4
A process for fabricating a semiconductor device comprising:
- a step of reducing the concentration of halogen atoms on a surface of a silicon layer and in a subsurface thereof,
- wherein the step includes forming a titanium film on the silicon layer and removing the titanium film.
A process for fabricating a semiconductor device comprising:
- a step of reducing the concentration of halogen atoms on a surface of a silicon layer and in a subsurface thereof,
- wherein the step includes forming a titanium film directly on the silicon layer and removing the titanium film.
Dependencies are inferred from the claim text.