Semiconductor integrated circuit and method for manufacturing semiconductor integrated circuit
AssigneeSeiko Epson Corporation
InventorTakayuki Kondo
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Abstract
A method for manufacturing a semiconductor integrated circuit includes steps of forming a semiconductor element on a semiconductor substrate and separating only a function layer including the semiconductor element, which is a surface layer of the semiconductor substrate, from the semiconductor substrate. The semiconductor element is preferably a compound semiconductor device including at least one of a light emitting diode, a vertical cavity surface emitting laserdiode, a photodiode, a high electron mobility transistor, an inductor, a capacitor, a resistor, and a heterojunction bipolar transistor.
Claims26
A method for manufacturing a semiconductor integrated circuit, comprising the steps of:
- forming a semiconductor element on a semiconductor substrate;
- and
- separating only a function layer including said semiconductor element, which is a surface layer of said semiconductor substrate, from said semiconductor substrate.
A method for manufacturing a semiconductor integrated circuit, comprising the steps of:
- forming a semiconductor element on a semiconductor substrate;
- attaching a film member on a surface of said semiconductor substrate on which said semiconductor element is formed;
- and
- separating a function layer of said semiconductor substrate including said semiconductor element from said semiconductor substrate.
A method for manufacturing a semiconductor integrated circuit, comprising the steps of
- forming a semiconductor element on a semiconductor substrate, said semiconductor substrate including a sacrificial layer that may be removed by an etching process;
- forming separation grooves on said semiconductor substrate, each of said separation grooves having a depth sufficient to reach at least said sacrificial layer;
- attaching a film member on a surface of said semiconductor substrate;
- and
- separating said semiconductor element from said semiconductor substrate by supplying an etching solution on said separation grooves to etch said sacrificial layer.
A semiconductor element member, comprising:
- a semiconductor element;
- and
- a film member attached to said semiconductor element, wherein
- said semiconductor element member is produced by a method comprising the steps of:
- forming said semiconductor element on a semiconductor substrate;
- separating said semiconductor element from said semiconductor substrate;
- and
- attaching said film member onto said semiconductor element.
Dependencies are inferred from the claim text.