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US 2003/0170958 A1Published application
Method of manufacturing semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKohei Sugihara, Hirokazu Sayama
Life of this patent
Estimating the term…
Abstract
When a dummy sidewall (22) and source and drain regions (23) are once formed and then the dummy sidewall (22) is removed to extend the source and drain regions (23), the removal of the dummy sidewall (22) is performed after formation of a protective oxide film (38) on a gate electrode (21) and on the major surfaces of the source and drain regions (23). This efficiently prevents conventional surface roughness of the upper surface of the gate electrode and the impurity region due to the removal of the dummy sidewall.
Claims10
A method of manufacturing a semiconductor device comprising the steps of:
- (a) forming a gate insulating film on a major surface of a semiconductor substrate and a gate electrode on said semiconductor substrate through said gate insulating film;
- (b) forming a dummy sidewall to cover side surfaces of said gate electrode and said gate insulating film and a predetermined area of said major surface which extends laterally from said side surfaces;
- (c) forming an impurity region by introducing an impurity into said major surface using said dummy sidewall and said gate electrode as masks;
- (d) forming a protective oxide film on said gate electrode and on said major surface using said dummy sidewall as a mask, said step (d) being performed either prior to or after said step (c);
- (e) reducing a thickness of said dummy sidewall, said step (e) being performed after said step (d);
- and
- (f) extending said impurity region under part of said gate insulating film using a dummy sidewall left after said step (e) and said gate electrode as masks.
4 more elements
Dependencies are inferred from the claim text.