Increased capacitance trench capacitor
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma
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Abstract
Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: forming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into the sidewall using the islands as a mask. The capacitor is completed by forming a node insulator on said on the pits and the sidewall; and filling said trench with a trench conductor.
Claims44
A method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising:
- forming a trench in a silicon substrate, said trench having a sidewall;
- forming islands on said sidewall of said trench;
- and
- etching pits into said sidewall using said islands as a mask.
A method of fabricating a trench capacitor, comprising:
- forming a trench in a silicon substrate, said trench having a sidewall;
- forming islands on said sidewall of said trench;
- etching pits into said sidewall using said islands as a mask;
- forming a node insulator on said pits and said sidewall;
- and
- filling said trench with a trench conductor.
A trench capacitor, comprising:
- a trench in a silicon substrate, said trench having a sidewall;
- pits etched into said sidewall;
- a node insulator on said pits and said sidewall;
- and
- a trench conductor filling said trench.
A dynamic random access memory cell, comprising:
- a FET comprising:
- a first and second source/drain region formed in a silicon substrate;
- a channel region between said first and second source/drain regions;
- a gate dielectric formed over said channel region;
- a wordline formed over said gate dielectric;
- and
- a bitline electrically connected to said first source/drain;
- a trench capacitor comprising:
- a trench in said silicon substrate, said trench having a sidewall;
- pits etched into said sidewall;
- a node insulator on said pits and said sidewall;
- and
- a trench conductor filling said trench.;
- and said second source/drain electrically connected to said trench conductor.
Dependencies are inferred from the claim text.