Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
AssigneeAlpine Microsystems, Inc.
InventorMike LaFleur
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Abstract
A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
Claims20
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising:
- forming a first electrode by depositing a conductive layer on said substrate;
- depositing a multi-layer dielectric film adjacent to said first electrode, with said dielectric film including first and second layers, said first layer being disposed adjacent to said first electrode and having a roughness associated therewith that is less than a roughness associated with said second layer;
- and
- forming a second electrode by depositing an additional conductive layer adjacent to said second layer.
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising:
- forming a first electrode by depositing a conductive layer on said substrate;
- growing, adjacent to said first electrode, a silicon dioxide layer by thermal oxidation of the silicon substrate;
- forming a tantalum pentoxide layer adjacent to said silicon dioxide layer by sputter deposition of tantalum to form a tantalum layer in an oxygen rich environment;
- and
- forming a second electrode by depositing an additional conductive layer adjacent to said tantalum containing layer.
A thin film capacitor formed on a substrate, said capacitor comprising:
- first and second spaced-apart conductive films formed on said substrate;
- and
- a multi-layer dielectric film including first and second layers disposed between said first and second conductive films, with said first layer containing silicon and said second layer containing tantalum, said first layer being disposed between said second layer and said first conductive film and having a roughness associated therewith that is less than a roughness associated with said second layer and a thickness sufficient to reduce pin hole formation between said second layer and said first conductive film.
Dependencies are inferred from the claim text.