Semiconductor device having a low-resistance gate electrode
AssigneeElpida Memory, Inc.
InventorTetsuya Taguwa
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Abstract
A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.
Claims19
A method for manufacturing a gate electrode in a semiconductor device, comprising the steps of:
- forming a layer structure including a doped polysilicon (DOPOS) film, a silicide film including first refractory metal, a nitride film including said first refractory metal, and a metallic film including second refractory metal, consecutively deposited on a substrate;
- and
- heat treating said layer structure as a whole.
A semiconductor device comprising a substrate, and a gate electrode structure overlying said substrate, said gate electrode structure including a doped polysilicon (DOPOS) film, a silicide film including first refractory metal, a nitride film including said first refractory metal, and a metallic film including second refractory metal, consecutively as viewed form said substrate.
A semiconductor device comprising a substrate, and a gate electrode structure overlying said substrate, said gate electrode structure including a doped polysilicon (DOPOS) film, a silicide film including first refractory metal, a nitride silicide film including said first refractory metal, and a metallic film including second refractory metal, consecutively as viewed form said substrate.
Dependencies are inferred from the claim text.