Silicon-on-insulator (soi) semiconductor structure for implementing transistor source connections using buried dual rail distribution

Abstract

Methods and silicon-on-insulator (SOI) semiconductor structures are provided for implementing transistor source connections for SOI transistor devices using buried dual rail distribution. A SOI semiconductor structure includes a SOI transistor having a silicide layer covering a SOI transistor source, a predefined buried conduction layer to be connected to a SOI transistor source, and an intermediate conduction layer between the SOI transistor and the predefined buried conduction layer. A first hole for a transistor source connection to a local interconnect is anisotropically etched in the SOI semiconductor structure to the silicide layer covering the SOI transistor source. A second hole aligned with the local interconnect hole is anisotropically etched through the SOI semiconductor structure to the predefined buried conduction layer. An insulator is disposed between the second hole and the intermediate conduction layer. A conductor is deposited in the first and second holes to create a transistor source connection to the predefined buried conduction layer in the SOI semiconductor structure. In one method of the invention, a thin layer of insulator is deposited over an interior of the etched holes. The deposited thin insulator layer is anisotropically etched to remove the deposited thin insulator layer from the bottom of the holes exposing the predefined buried conduction layer in the SOI semiconductor structure with the thin insulator layer covering sidewalls of the holes to provide the insulator between the second hole and the intermediate conduction layer. In another method of the invention, the SOI semiconductor structure includes a patterned buried oxide implant in the intermediate buried conduction layer, the second hole is etched through the patterned buried oxide implant and the conductor is insulated from the intermediate buried conduction layer by the patterned buried oxide implant.

Dependencies are inferred from the claim text.