Memory device utilizing carbon nanotubes and method of fabricating the memory device

A method of fabricating a carbon nanotube memory device, the method comprising:

• (a) growing a carbon nanotube on a substrate and forming a source electrode and a drain electrode in contact with the carbon nanotube such that the carbon nanotube between the source electrode and the drain electrode serves as a charge moving channel;
• (b) forming a memory cell in contact with the carbon nanotube by sequentially depositing a first insulating film, a charge storage film, and a second insulating film on the carbon nanotube, the source electrode, and the drain electrode, and patterning the resultant structure using a photolithographic method;
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• (c) forming a gate electrode which controls the amount of charge flowing from the carbon nanotube into the charge storage film by depositing a metal layer on the second insulating film and patterning the resultant structure using a photolithographic method.

A method of fabricating a carbon nanotube memory device, the method comprising:

• (a) growing a carbon nanotube on a substrate and forming a source electrode and a drain electrode in contact with the carbon nanotube such that the carbon nanotube between the source electrode and the drain electrode serves as a charge moving channel;
• (b) forming a porous film having a plurality of nanodots by depositing a first insulating film on the upper surfaces of the carbon nanotube and the source and drain electrodes, and anodizing and etching the first insulating film;
• (c) filling the nanodots with a charge storage material by depositing the charge storage material on the upper surface of the porous film and then etching the charge storage material;
• (d) forming a memory cell by depositing a second insulating film on the upper surface of the porous film and patterning the first insulating film, the porous film, and the second insulating film using a photolithographic method;
• and
• (e) forming a gate electrode which controls the amount of charge flowing from the carbon nanotube into the charge storage film by depositing a metal layer on the second insulating film and patterning the resultant structure using a photolithographic method.