Semiconductor devices and methods
AssigneeThe Board of Trustees of the University of Illinois
InventorsNick Holonyak JR., Russell Dupuis
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Abstract
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.
Claims62
A method of forming a semiconductor device, comprising the steps of:
- providing a plurality of semiconductor layers;
- providing a means for coupling signals to and/or from layers of said device;
- providing a layer of quantum dots disposed between adjacent layers of said device;
- and
- providing an auxiliary layer disposed in one of said adjacent layers, and spaced from said layer of quantum dots, said auxiliary layer being operative to communicate carriers with said layer of quantum dots.
A semiconductor device, comprising:
- a plurality of semiconductor layers;
- means for coupling signals to and/or from layers of said device;
- a layer of quantum dots disposed between adjacent layers of said device;
- and
- an auxiliary layer disposed in one of said adjacent layers, and spaced from said layer quantum dots, said auxiliary layer being operative to communicate carriers with said layer of quantum dots.
A method of forming a semiconductor device, comprising the steps of:
- providing a plurality of semiconductor layers;
- providing a means for coupling signals to and/or from layers of said device;
- providing a quantum well disposed between adjacent layers of said device;
- and
- providing a layer of quantum dots disposed in one of said adjacent layers, and spaced from said quantum well, whereby carriers can tunnel in either direction between said quantum well and said quantum dots.
A semiconductor device, comprising:
- a plurality of semiconductor layers;
- means for coupling signals to and/or from layers of said device;
- a quantum well disposed between adjacent layers of said device;
- and
- a layer of quantum dots disposed in one of said adjacent layers, and spaced from said quantum well, whereby carriers can tunnel in either direction between said quantum well and said quantum dots.
A semiconductor device, comprising:
- a plurality of semiconductor layers;
- means for coupling signals to and/or from layers of said device;
- a quantum well disposed between adjacent layers of said device;
- and
- a layer of quantum dots disposed in one of said adjacent layers, and spaced from said quantum well, whereby carriers can tunnel in either direction between said quantum well and said quantum dots.
A method of forming a semiconductor device, comprising the steps of:
- providing a plurality of III-V semiconductor layers;
- providing a means for coupling signals to and/or from layers of said device;
- and
- providing a layer of doped quantum dots disposed in at least one of said layers as a source of carriers that can communicate in either direction between said dots and another layer.
A semiconductor device, comprising:
- a plurality of III-V semiconductor layers;
- means for coupling signals to and/or from layers of said device;
- and
- a layer of doped quantum dots disposed in at least one of said layers as a source of carriers that can communicate in either direction between said dots and another layer.
Dependencies are inferred from the claim text.