Low temperature melt-processing of organic-inorganic hybrid
AssigneeInternational Business Machines Corporation
InventorsPatrick W. Dehaven, David R. Medeiros, David B. Mitzi
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Abstract
The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining an solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
Claims70
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- maintaining an organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of said organic-inorganic hybrid material for a period of time sufficient to form a uniform melt;
- and
- cooling said uniform melt to an ambient temperature under conditions sufficient to produce said melt-processed organic-inorganic hybrid material.
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- applying onto a substrate an organic-inorganic hybrid material;
- maintaining said substrate and/or said organic-inorganic hybrid material at a temperature above the melting point of said organinc-inorganic hybrid material but below the decomposition temperature of said organic-inorganic hybrid material and said substrate for a period of time sufficient to form a uniform melt;
- and
- cooling said substrate and/or uniform melt to an ambient temperature under conditions sufficient to form said melt-processed organic-inorganic hybrid material.
A process for preparing a laminated melt-processed organic-inorganic hybrid material, comprising the steps of:
- applying onto a substrate an organic-inorganic hybrid material;
- maintaining said substrate and/or said organic-inorganic hybrid material at a temperature above the melting point of said organinc-inorganic hybrid material but below the decomposition temperature of said organic-inorganic hybrid material and said substrate for a period of time sufficient to form a uniform melt;
- laminating a protective layer of a material on said uniform melt to produce a composite structure;
- and
- cooling said composite structure to an ambient temperature under conditions sufficient to produce said laminated melt-processed organinc-inorganic hybrid material.
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- melt-spinning an organic-inorganic hybrid material onto a substrate;
- and
- cooling said substrate and/or uniform melt to an ambient temperature under conditions sufficient to form said melt-processed organic-inorganic hybrid material.
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- melt-dipping a substrate into a uniform melt of an organic-inorganic hybrid material to produce a melt-dipped substrate;
- and
- cooling said melt-dipped substrate to an ambient temperature under conditions sufficient to form said melt-processed organic-inorganic hybrid material.
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- extruding an organic-inorganic hybrid material through a heated extruder;
- and
- cooling to an ambient temperature under conditions sufficient to form said melt-processed organic-inorganic hybrid material.
A process for preparing a melt-processed organic-inorganic hybrid material comprising the steps of:
- capillary-filling a uniform organic-inorganic hybrid material melt into a narrow space capable of capillary action with or without the use of vacuum;
- and
- cooling to an ambient temperature under conditions sufficient to form said melt-processed organic-inorganic hybrid material.
A method of preparing an improved field-effect transistor of the type having a source region and a drain region, a channel layer extending between the source region and the drain region, the channel layer including a semiconducting organic-inorganic hybrid material, a gate region disposed in spaced adjacency to the channel layer, an electrically insulating layer between the gate region and the source region, drain region and channel layer, wherein the improvement comprises:
- preparing a channel layer comprising a melt-processed semiconducting organic-inorganic hybrid material by a process comprising the steps of:
- maintaining an organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of said organic-inorganic hybrid material for a period of time sufficient to form a uniform melt;
- and
- cooling said uniform melt to an ambient temperature under conditions sufficient to produce said melt-processed organic-inorganic hybrid material.
Dependencies are inferred from the claim text.