Base material for forming diamond film and diamond film
AssigneeShin-Etsu Chemical Co., Ltd.
InventorHitoshi Noguchi
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Abstract
There is disclosed a base material for forming a diamond film by vapor phase synthesis, wherein diamond particles having a particle diameter of 2 nm to 100 nm exist at a density of 1×108 to 1×1013 number/cm2 on a surface of the base material, and spaces among the diamond particles are filled with diamond particles having a particle diameter of less than 2 nm. There can be provided a base material for forming a diamond film by vapor phase synthesis which can provide a high generation density of diamond nuclei and a continuous diamond film even with an extremely small film thickness such as 10 μm or less.
Claims20
A base material for forming a diamond film by vapor phase synthesis, wherein at least a layer of diamond particles having a particle diameter of 2 nm to 100 nm is adhered to a base material surface.
Dependencies are inferred from the claim text.