Indium-tin oxide (ito) layer and method for producing the same
AssigneeUnaxis Deutschland GmbH
InventorsAndreas Kloppel, Jutta Trube
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Abstract
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.
Claims8
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, characterized by combined HF/DC sputtering of an indium-tin oxide (ITO) target, wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering.
A process in accordance with any one of the preceding claims, characterized in that the mixing ratio of the argon/hydrogen mixture amounts to 80/20 and that the argon/hydrogen mixture constitutes 0.1 to 30%, especially 5 to 15% and preferably 8 to 10% of the process gas.
A process in accordance with any one of the preceding claims, characterized in that the pressure of the process gas during sputtering amounts to between 0.5 and 5 μmbar, especially 1.5 to 3 μmbar.
A process in accordance with any one of the preceding claims, characterized in that the substrate temperature during deposition of the ITO film does not exceed 250° C. and preferably does not exceed 200° C.
A process in accordance with any one of the preceding claims, characterized in that magnetron sputter is used for sputtering.
An indium-tin oxide (ITO) film for use as transparent and conductive electrode, especially with organic LED displays, on a substrate, especially produced by means of the process in accordance with one of the preceding claims, characterized in that the film has a specific resistance of less than 200 μΩcm and a surface roughness of less than 1
An ITO film in accordance with claim 8, characterized in that, its specific resistance amounts to 120 to 180 μΩcm.
Dependencies are inferred from the claim text.