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US 2003/0170424 A1Published application
Method for bonding and debonding films using a high-temperature polymer
OwnerBrian Roberds, Cindy Colinge +1inventors
InventorsBrian Roberds, Cindy Colinge, Brian Doyle
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Abstract
The invention relates to a semiconductor structure that is formed by delaminating a semiconductor substrate and by bonding the top section of the substrate to a transfer substrate. Delaminating is carried out by causing a polymer film to achieve greater adhesion that an embrittlement layer in the semiconductor substrate.
Claims30
A process comprising:
- forming a stiffener upon a first substrate, wherein the first substrate includes a top section and a bottom section, wherein the stiffener is disposed against the top section;
- contacting the stiffener with a polymer film that is disposed upon a second substrate;
- and
- delaminating the bottom section.
1 more element
A process of forming a bonded epitaxial film device comprising:
- forming an active device upon a top section of a first substrate;
- forming a stiffener upon the top section of the first substrate, wherein the first substrate includes a bottom section;
- contacting the stiffener with a polymer film that is disposed upon a second substrate;
- delaminating the bottom section from the top section along a fracture surface;
- forming a first dielectric layer upon the fracture surface;
- contacting the first dielectric layer with a dielectric layer on a third substrate;
- and
- delaminating the second substrate.
5 more elements
A process comprising:
- providing a first wafer including a top section and a bottom section and a stiffener disposed against the top section;
- providing an intermediate substrate including a first side and a second side and a polymer film disposed on the first side;
- applying the polymer film to the stiffener;
- treating the polymer film under conditions that cause the polymer to reflow against the stiffener and to outgas;
- and
- delaminating the bottom section.
3 more elements
An article of manufacture comprising:
- a first substrate active layer, wherein the first substrate active layer includes an upper surface and a fracture surface that is disposed opposite the upper surface;
- a first dielectric layer disposed on the fracture surface;
- a stiffener disposed on the upper surface;
- a transfer substrate disposed against the first dielectric layer, wherein the transfer substrate includes a transfer substrate dielectric layer.
1 more element
Dependencies are inferred from the claim text.