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US 2003/0170415 A1Published application
Ceramic substrate
AssigneeIbiden Co., Ltd.
InventorsYasuji Hiramatsu, Yasutaka Ito
Life of this patent
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Abstract
An object of the present invention is to provide an optimum ceramic substrate being excellent in temperature rising property and breakdown voltage and Young's modulus at a high temperature as a substrate for producing/examining a semiconductor, and in the ceramic substrate of the present invention having a conductor on a surface or inside thereof, the ceramic substrate has a leakage quantity of 10−7 Pa·m3/sec (He) or less by measurement with a helium leakage detector.
Claims10
A ceramic substrate having a conductor on a surface or inside thereof,
- wherein said ceramic substrate has a leakage quantity of 10−7 pa·m3/sec (He) or less by measurement with a helium leakage detector.
Dependencies are inferred from the claim text.