Method for forming thin film and appatus for forming thin film
AssigneesTokyo Electron Limited, NEC Corporation
InventorsHiroshi Shinriki, Kenji Matsumoto, Toru Tatsumi
Life of this patent
Estimating the term…
Abstract
A shower head 9 having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate 10 and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace 8 of an MOSVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head 9.
Claims4
A thin film forming method of forming a thin film containing a metal element on a substrate by chemical vapor deposition which utilizes a thermal decomposition reaction of an organometallic compound, characterized by comprising
- heating, to a temperature higher than a thermal decomposition point of an organic metal gas but lower than a film forming temperature, an inside in the vicinity of a substrate-side surface of gas supply means for supplying an organic metal gas to a surface of the substrate at uniform density.
A thin film forming method of forming a thin film containing a metal element on a substrate by chemical vapor deposition which utilizes a thermal decomposition reaction of an organometallic compound, characterized by comprising
- heating, to a temperature higher than a thermal decomposition point of an organic metal gas but lower than a film forming temperature, an inside at only a periphery of an ejection hole for an organic metal gas out of two gas ejection holes provided to gas supply means for supplying an organic metal gas and oxidizing gas to a surface of the substrate at uniform density.
A thin film forming apparatus for forming a thin film containing a metal element on a substrate by chemical vapor deposition which utilizes a thermal decomposition reaction of an organometallic compound, characterized by comprising
- gas supply means provided in a reaction chamber to have a plurality of ejection holes which supplies an organic metal gas to a surface of the substrate at uniform density,
- wherein a heater for heating the organic metal gas to a temperature higher than a thermal decomposition point of an organic metal gas but lower than a film forming temperature is incorporated near a substrate-side surface of said gas supply means.
A thin film forming apparatus for forming a thin film containing a metal element on a substrate by chemical vapor deposition which utilizes a thermal decomposition reaction of an organometallic compound, characterized by comprising
- gas supply means provided in a reaction chamber to have a plurality of first ejection holes which supply an organic metal gas to a surface of the substrate at uniform density and a plurality of second ejection holes which supply an oxidizing gas at uniform density,
- wherein a heater for heating the organic metal gas to a temperature higher than a thermal decomposition point of an organic metal gas but lower than a film forming temperature is incorporated around the first ejection holes of said gas supply means.
Dependencies are inferred from the claim text.