Programmable conductor random access memory and method for sensing same

A method of sensing a stored value of a programmable conductor random access memory element, the method comprising:

• setting a plurality of row lines and a plurality of column lines associated with a memory array to a common voltage such that no current flows through said memory element;
• changing the voltage at a selected row line to approximately zero volts such that a current flow is initiated from a column line associated with said memory element through said memory element and through a diode circuit coupled to said memory element;
• and
• comparing the voltage at said column line with a reference voltage a predetermined time after said act of changing in order to determine a logical state of said memory element.

A semiconductor memory structure, comprising:

• a column line and a row line associated with a programmable conductor random access memory cell;
• a programmable conductor memory element, a first terminal of which is coupled to said column line and a second terminal of which is coupled to a first terminal of a diode circuit, wherein
• a second terminal of said diode circuit is coupled to said row line;
• and
• a sense amplifier for comparing a voltage on said column line with a reference voltage during a read operation to determine a logical state of said programmable conductor memory element.

A processor system, comprising:

• a processor;
• and
• a semiconductor memory structure coupled to said processor, said semiconductor memory structure comprising:
• a column line and a row line associated with a programmable conductor random access memory cell,
• a programmable conductor memory element, a first terminal of which is coupled to said column line and a second terminal of which is coupled to a first terminal of a diode circuit, wherein
• a second terminal of said diode circuit is coupled to said row line;
• and
• a sense amplifier for comparing a voltage on said column line with a reference voltage during a read operation to determine a logical state of said programmable conductor memory element.