High power capacitors from thin layers of metal powder or metal sponge particles
AssigneeCase Western Reserve University
InventorsGerhard E. Welsch, Donald L. McGervey
Life of this patent
Estimating the term…
Loading patent…
AssigneeCase Western Reserve University
InventorsGerhard E. Welsch, Donald L. McGervey
Estimating the term…
An anode (14, 208, 410) and/or cathode (12, 212, 420) of a capacitor has a large surface area. The high surface area of the anode is provided by forming the anode from a thin, electrically conductive layer (16) formed from metal particles (18) or an electrically conductive metallic sponge (416). These materials provide a porous structure with a large surface area of high accessibility. The particles are preferably directional or non-directional sponge particles of a metal, such as titanium. The conductive layer hasa dielectric film (36, 236, 414) on its surface, formed by anodizing the particle surfaces. The dielectric film has a combination of high dielectric constant and high dielectric strength. The cathode (12, 212, 420) of the capacitor is either a conventional solid material or, more preferably, has a large surface provided by forming the surface from a sponge or particles analogously to the anode. The high dielectric strengths obtainable from the capacitor allow for extreme miniaturization, making the capacitor particularly suited for integrated circuit applications.
A capacitor comprising an anode (10), a dielectric film (36,236) on a surface of the anode, and a cathode (12) which includes an electrolyte (24, 224) in contact with the dielectric film, the capacitor characterized by:
A method of forming a capacitor, the method including providing an anode (10) and a cathode (12) and forming a dielectric film (36, 236) on a surface of the anode, the method characterized by:
A semiconductor device comprising a semiconductor substrate (200), at least one capacitor (C1, C2) on a surface of the semiconductor substrate, the capacitor including an anode (208, 216), a cathode (212), and a dielectric layer (236) between the anode and cathode, the device characterized by:
The semiconductor device of either one of preceding claims 29 and 30, further characterized by:
A method of forming a semiconductor device comprising depositing a layer (208) of an electrically conductive material (208) on a semiconductor substrate (200), the method characterized by:
Dependencies are inferred from the claim text.