US 2003/0169543 A1 · Magnetoresistance effect film and device

Abstract

A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer (Zr, Hf, Zr—Hf, Zr—Co, Zr—Au, Ni—O, Co—O or Fe—O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 Å. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr—O, Ta—O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.

Claims31

Dependent claims

A magnetoresistance effect film formed on a substrate, comprising:

a plurality of magnetic thin films;
a non-magnetic thin film interposed between said magnetic thin films arranged ajacent thereto;
and
an antiferromagnetic thin film arranged adjacent to one of a pair of said magnetic thin films disposed via the non-magnetic thin film, said antiferromagnetic thin film generating an exchange bias field of Hr, the other of said pair of magnetic thin films having a coercive force of Hc2 lower than Hr,
wherein said magnetoresistance effect film comprises a ground layer formed on said substrate, said ground layer being made of material selected from the group consisting of Zr, Hf, an alloy thereof, Zr—Au and Zr—Co, said antiferromagnetic thin film being laminated adjacent to said ground layer, and said antiferromagnetic thin film is made of material selected from the group consisting of PtMn, PdMn, NiMn and an alloy composed of at least two selected therefrom, said antiferromagnetic thin film having a surface with an average roughness of 1-5 Å.

2 more elements

A magnetoresistance effect film formed on a substrate, comprising:

a plurality of magnetic thin films;
a non-magnetic thin film interposed between said magnetic thin films arranged ajacent thereto;
and
an antiferromagnetic thin film arranged adjacent to one of a pair of said magnetic thin films disposed via the non-magnetic thin film, said antiferromagnetic thin film generating an exchange bias field of Hr, the other of said pair of magnetic thin films having a coercive force of Hc2 lower than Hr,
wherein said magnetoresistance effect film comprises a ground layer formed on said substrate, said ground layer being made of material selected from the group consisting of a nickel oxide, a cobalt oxide, an iron oxide and an alloy composed of at least two selected therefrom, said antiferromagnetic thin film being laminated adjacent to said ground layer, and said antiferromagnetic thin film is made of material selected from the group consisting of PtMn, PdMn, NiMn and an alloy composed of at least two selected therefrom, said antiferromagnetic thin film having a surface with an average roughness of 1-5 Å.

2 more elements

Dependencies are inferred from the claim text.

Magnetoresistance effect film and device

Life of this patent

Magnetoresistance effect film and device

Life of this patent

Abstract

Claims31