Method for fabricating liquid crystal display

A method for fabricating liquid crystal display, comprising:

• providing an insulation substrate;
• forming a buffer layer on the insulation substrate;
• forming an amorphous silicon layer on the buffer layer;
• transforming the amorphous silicon layer into a polysilicon layer by laser low temperature annealing;
• forming a first active area and a second active area by defining the polysilicon layer, wherein the first active area is a driving area and the second active area is a pixel area;
• forming a first insulation layer covering the polysilicon layer;
• forming a patterned conductive layer on the driving area and the pixel layer, wherein the patterned conductive layer serves as gates and upper electrodes of capacitors;
• using the patterned conductive layer as a mask, forming a source/drain, channel region and lower electrode in the polysilicon layer by an ion-doping process;
• forming a second insulation layer covering the insulation substrate;
• forming a plurality of first openings and exposing the gate and the source/drain;
• forming a second conductive layer to cover the second insulation layer and fill the first opening;
• patterning the second conductive layer to form a source/drain line contacting electrically with the source/drain;
• forming a dielectric layer covering the second insulation layer and the second conductive layer, wherein the dielectric layer has a planar surface;
• forming a second opening, wherein the drain line on the pixel area is exposed;
• and
• forming a pixel electrode connecting electrically with the drain line.