Semipermeable liquid crystal display device and manufacturing method thereof

A manufacturing method for an active matrix type semipermeable liquid crystal display device, comprising:

• an interlayered insulator film on a silicon layer forming said source and drain of a thin-film-transistor;
• a reflecting electrode formed with surface irregularities on said interlayered insulator film in said reflecting section of said pixel;
• and
• a transparent electrode made of transparent conductive film on said transparent section of said pixel, wherein in the forming and processing of said interlayered insulator film in the following processes A through D:
• A:
• is a process for forming an interlayered insulator film on a silicon layer forming said source and drain of said TFT;
• B:
• is a process for forming a photoresist layer on said interlayered insulator film;
• C:
• a process for patterning said photoresist layer by said lithographic method wherein, in a process using a mask formed with a pattern within the resolution limit in the section for forming said reflecting electrode, said photomask of said photoresist layer is utilized as said mask, so that said photoresist layer corresponding to transparent section of said pixel and the section for forming said contact holes formed in said interlayered insulator film above said drain and source can be completely removed, and so surface irregularities can be therefore be formed in said photoresist layer corresponding to the section formed with said reflecting electrode,
• D:
• a process using said photoresist layer patterned in process C as said etching mask for completely etching an opening in said interlayered insulator film for said permeable section of said pixel and the section for forming said contact holes, and for etching said interlayered insulator film so that surface irregularities are formed in said interlayered insulator film of the section for forming said reflecting electrode.