Chemical-mechanical polishing device, damascene wiring forming device, and dama-scene wiring forming method
AssigneeTokyo Electron Limited
InventorShunichi Shibuki
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Abstract
In a chemical mechanical polishing apparatus in accordance with the present invention, a material having a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm is used as an elastic member (16) arranged between a polishing pad (12) and a platen (36). Therefore, both flatness and uniformity of a wafer can be sufficiently improved.
Claims7
A chemical mechanical polishing apparatus planarizing a surface of a metal film formed on a semiconductor substrate (10), comprising:
- a substrate holding table (42) holding said semiconductor substrate by vacuum suction;
- a polishing pad (12) being in contact with said semiconductor substrate;
- a platen (36) holding said polishing pad;
- and
- an elastic member (16) arranged between said polishing pad and said platen, wherein
- said elastic member has a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm.
A damascene interconnection forming apparatus forming an insulating film (46) on a semiconductor substrate (10), forming a recessed portion in a prescribed region of the insulating film, forming a barrier metal film (48) on a surface of the insulating film including the recessed portion, and forming a metal interconnection film (52) on said barrier metal film to completely fill in at least said recessed portion, followed by polishing said metal film and said barrier metal film until said insulating film is exposed in a region other than said recessed portion, comprising:
- first polishing means for performing a first polishing step of polishing said metal interconnection film until said barrier metal film is exposed in the region other than said recessed portion;
- and
- second polishing means for performing a second polishing step of polishing said barrier metal film until said insulating film is exposed in the region other than said recessed portion, wherein
- said first polishing means includes a substrate holding table holding said semiconductor substrate by vacuum suction, a polishing pad being in contact with said semiconductor substrate, a platen holding said polishing pad, and an elastic member arranged between said polishing pad and said platen and having a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm, and
- said second polishing means includes a substrate holding table holding said semiconductor substrate by vacuum suction, a polishing pad being in contact with said semiconductor substrate, a platen holding said polishing pad, and an elastic member arranged between said polishing pad and said platen and having a hardness defined by JIS standard K6301 (A type) of at least 50.
A damascene interconnection forming method of forming an insulating film (46) on a semiconductor substrate (10), forming a recessed portion in a prescribed region of the insulating film, forming a barrier metal film (48) on a surface of the insulating film including the recessed portion, and forming a metal interconnection film (52) on said barrier metal film to completely fill in at least said recessed portion, followed by polishing said metal film and said barrier metal film until said insulating film is exposed in a region other than said recessed portion, comprising:
- a first polishing step of polishing said metal interconnection film until said barrier metal film is exposed in the region other than said recessed portion using first polishing means;
- and
- a second polishing step of polishing said barrier metal film until said insulating film is exposed in the region other than said recessed portion using second polishing means, wherein
- said first polishing means includes a substrate holding table (66) holding said semiconductor substrate by vacuum suction, a polishing pad (62, 64) being in contact with said semiconductor substrate, a platen (54, 56) holding said polishing pad, and an elastic member (58, 60) arranged between said polishing pad and said platen and having a hardness defined by JIS standard K6301 (A type) of 10-40 and a thickness of 5-30 mm, and
- said second polishing means includes a substrate holding table holding said semiconductor substrate by vacuum suction, a polishing pad being in contact with said semiconductor substrate, a platen holding said polishing pad, and an elastic member arranged between said polishing pad and said platen and having a hardness defined by JIS standard K6301 (A type) of at least 50.
Dependencies are inferred from the claim text.