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US 2003/0166346 A1Published application
Methods of fabricating capacitors including TA2O5 layers in a chamber including changing a TA2O5 layer to heater separation or chamber pressure
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Yeon Park, Heung-Soo Park, Young-Wook Park
Life of this patent
Estimating the term…
Abstract
Methods of forming Ta2O5 layers in a process chamber are disclosed. A Ta2O5 layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer. At least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta2O5 layer to about the temperature for crystallization.
Claims10
A method of forming a Ta2O5 layer in a process chamber, comprising:
- maintaining the Ta2O5 layer at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer;
- and
- changing at least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber to increase the temperature of the Ta2O5 layer to about the temperature for crystallization.
Dependencies are inferred from the claim text.