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US 2003/0166344 A1Published application
Method for manufacturing a semiconductor device
AssigneeASM Japan K.K.
InventorsAkira Shimizu, Fumitoshi Ozaki
Life of this patent
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Abstract
A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.
Claims20
A method of processing a semiconductor substrate, comprising:
- providing a semiconductor substrate disposed within a chamber, wherein the semiconductor substrate comprises a SiOF film and at least one other film, and
- selectively etching the SiOF film with a gas comprising HF.
A method of processing a semiconductor substrate, comprising:
- providing a chamber comprised of an inner wall;
- providing a semiconductor substrate disposed within the chamber, wherein the semiconductor substrate comprises a SiOF film and at least one other film, and
- selectively etching the SiOF film with a gas comprising HF at a temperature about 0° C. to about 50° C. higher than the temperature of the inner wall by a process comprising introducing the gas to the chamber, maintaining the gas in the chamber at a fixed pressure for a fixed period of time, and removing the gas from the chamber.
A method of producing a hollow structure in a semiconductor device, comprising:
- forming a first SiOF layer on a first interconnection;
- forming a first cap layer on the first SiOF layer;
- forming a first contact hole passing through the first cap layer and the first SiOF layer;
- forming a first contact plug by filling the first contact hole;
- and
- selectively etching the first SiOF layer to form a hollow structure.
3 more elements
Dependencies are inferred from the claim text.