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AssigneeHitachi High-Technologies Corporation
InventorsMuneo Furuse, Mitsuru Suehiro, Hiroshi Kanekiyo, Kunihiko Koroyasu, Tomoyuki Tamura
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A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
A plasma etching method comprising the steps of:
A plasma etching method for generating a plasma in a processing chamber and etching a sample using the plasma, comprising the steps of:
A plasma etching method for etching a sample under the processing pressure of not higher than 10 Pa, wherein the processing gas is supplied from a position not less than 30 mm and not more than one half of the diameter of the sample in distance from the sample, toward the center of the sample at an inclination angle (θ) to the surface of the sample, smaller than tan−1(t/d), where t is the thickness of the shower plate, and d is the diameter of the processing gas supply hole.
Dependencies are inferred from the claim text.