CMP system for metal deposition
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsTerence M. Thomas, Joseph K. So
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Abstract
A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
Claims9
A system for dished metal redevelopment of a semiconductor wafer by moving a surface of the wafer against a moving polishing pad, the system comprising the steps of:
- providing a plating solution at an interface between the wafer and the polishing pad, which redevelops dished trenches in an interlayer dielectric, ILD, of the wafer by depositing metal onto the dished trenches;
- and
- polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited onto the dished trenches.
A system for dished metal redevelopment of a semiconductor wafer by moving the wafer against a moving polishing pad, and providing a polishing fluid at an interface of the wafer and the polishing pad during polishing, the system comprising the steps of:
- polishing the wafer with a relatively higher polishing pressure for a time period sufficient to remove a top layer of metal over an underlying interlayer dielectric, ILD;
- polishing the wafer with a reduced polishing pressure while providing a metal electroless plating solution at said interface, which redevelops dished trenches in the ILD by plating a top layer of plated metal onto the dished trenches, and by plating metal onto the underlying ILD that is removed to the level of the underlying ILD by polishing with the reduced polishing pressure.
A system for dished trench redevelopment of a semiconductor wafer by moving the wafer against a moving polishing pad, and providing a polishing fluid at an interface of the wafer and the polishing pad during polishing, the system comprising the steps of:
- polishing the wafer with a relatively higher polishing pressure for a time period sufficient to remove a top layer of metal over an underlying interlayer dielectric, ILD, the ILD having dished trenches of imbedded metal to provide circuit interconnects;
- polishing the wafer with a reduced polishing pressure while providing a plating solution at said interface, which redevelops the dished trenches by plating a layer of plated metal onto the dished trenches, and the step of polishing the wafer with a reduce polishing pressure further includes the step of polishing the layer of plated metal.
A system for dished metal redevelopment of a semiconductor wafer by moving a surface of the wafer against a moving polishing pad, the system comprising the steps of:
- polishing the wafer with a relatively higher polishing pressure for a time period sufficient to remove a top layer of metal,
- polishing the wafer with a reduced polishing pressure while providing a metal deposition solution at an interface between the wafer and the polishing pad, which redevelops dished trenches in the ILD by depositing metal onto the dished trenches, and by polishing the metal being deposited onto the dished trenches.
A polishing fluid for use in dished metal redevelopment by a CMP polishing operation wherein, a moving semiconductor wafer is urged against a moving polishing pad, the polishing fluid comprising:
- a metal deposition solution for depositing metal onto dished trenches in said wafer during said CMP polishing operation.
Dependencies are inferred from the claim text.