Back to results
US 2003/0166337 A1Published application
Chemical mechanical polishing systems and methods for their use
AssigneeCabot Microelectronics Corporation
InventorsShumin Wang, Vlasta Brusic Kaufman
Life of this patent
Estimating the term…
Abstract
Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.
Claims40
A chemical mechanical polishing system comprising:
- at least one oxidizing agent;
- and
- at least one alpha-amino acid having the formula H2N—CR1R2COOH, wherein R1 and R2 are not both hydrogen and wherein R1 and R2 are each individually selected from the group of hydrogen, and cyclic, branched and straight chain moieties having from 1 to 8 carbon atoms that are unsubstituted or substituted with one or more substituents selected from nitrogen containing substituents, oxygen containing substituents, sulfur containing substituents and mixtures thereof.
A chemical mechanical polishing composition comprising:
- from about 0.5 to about 10.0 wt % hydrogen peroxide;
- and
- from about 0.05 to about 10.0 wt % alanine.
A chemical mechanical polishing composition comprising:
- from about 0.5 to about 10.0 wt % of at least one oxidizing agent;
- from about 0.05 to about 10.0 wt % alanine;
- and
- from about 0.01 to about 5.0 wt % of at least one nitrogen containing compound that inhibits the ability of the chemical mechanical polishing composition to polish at least one layer associated with a substrate, wherein the at least one nitrogen containing compound is cationically charged.
1 more element
A method for polishing a substrate including a first metal layer and a second layer located below the first metal layer comprising:
- a. applying a chemical mechanical polishing composition to the substrate in conjunction with a polishing pad, the chemical mechanical polishing composition including an oxidizing agent and at least one alpha-amino acid having the formula H2N—CR1R2COOH, wherein R1 and R2 are not both hydrogen and wherein R1 and R2 are each individually selected from the group of hydrogen, and cyclic, branched and straight chain moieties having from 1 to 8 carbon atoms that are unsubstituted or substituted with one or more substituents selected from nitrogen containing substituents, oxygen containing substituents, sulfur containing substituents and mixtures thereof;
- and
- b. polishing the first metal layer with the chemical mechanical polishing composition and polishing pad until at least a portion of the first metal layer is removed from the substrate to form a partially polished substrate.
Dependencies are inferred from the claim text.