Method of forming wiring in semiconductor devices
OwnerHyung Kyun Kim, Min Yong Lee +1inventors
InventorsHyung Kyun Kim, Min Yong Lee, Kwon Son
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Abstract
The invention relates to a method of forming wiring in a semiconductor device. In order to prevent a lift or a crack generated when nitride films having different physical properties come in contact, the invention uses a nitride film having a similar stress characteristic; a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a single type chamber capable of processing wafers one by one, and a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a batch type chamber capable of processing several sheet of wafers.
Claims5
A method of forming wiring in a semiconductor device, comprising the steps of:
- forming a conductive layer on an insulating film formed on a semiconductor substrate;
- depositing a nitride film on said conductive layer by a low-pressure chemical vapor deposition method to form a hard mask layer;
- patterning said hard mask layer to form a patterned hard mask;
- patterning said conductive layer using the patterned hard mask to form a patterned conductive layer;
- and
- depositing a nitride film by a low-pressure chemical vapor deposition method and then etching a spacer to form a spacer at a sidewall of the patterned conductive layer and the hard mask.
Dependencies are inferred from the claim text.