Bond pad and process for fabricating the same
OwnerMing-Yu Lin, Lien-Che Ho +1inventors
InventorsMing-Yu Lin, Lien-Che Ho, Mao-l Ting
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Abstract
A bond pad of a semiconductor device and a process for fabricating the same are provided. On a semiconductor base is formed a plurality of disconnected insulation blocks that are defined by a plurality of channels. The disconnected insulation blocks are arranged in a grid or helix form. A barrier layer is formed over the disconnected insulation blocks and the semiconductor base. A conductive layer is formed over the disconnected insulation blocks to fill the channels, such that a topography of the conductive layer is similar to that of the underlying structure.
Claims15
A process for fabricating a bond pad, comprising:
- depositing an interlayer dielectric layer (ILD) on an upper conductive layer;
- defining the ILD to form a plurality of disconnected dielectric blocks;
- forming a barrier layer on the disconnected dielectric blocks and the upper conductive layer;
- depositing a conductive material between the disconnected dielectric blocks;
- and
- forming a metal layer over the disconnected dielectric blocks and the conductive material to form a plurality of bond pads.
A bond pad of a semiconductor device that has at least a semiconductor element protected by a first insulation layer, the bond pad being located on the first insulation layer and electrically connected to the underlying semiconductor element, the bond pad comprising:
- a semiconductor base laminated on the first insulation layer,
- a plurality of disconnected insulation blocks on the semiconductor base,
- wherein the disconnected insulation blocks are defined by a plurality of channels;
- a conductive layer over the disconnected insulation blocks to fill the channels;
- and
- a third insulation layer over the conductive layer, leaving a portion of the conductive layer exposed.
Dependencies are inferred from the claim text.