Semiconductor device manufacturing method

A method of manufacturing a semiconductor device comprising the steps of:

• forming an underlying insulating film over a semiconductor substrate;
• forming a first conductive film over the underlying insulating film;
• forming a dielectric film consisting of one of ferroelectric material and high-dielectric material on the first conductive film;
• forming a second conductive film on the dielectric film;
• forming a mask over the second conductive film;
• etching selectively the second conductive film exposed from the mask in a first atmosphere, into which a first etching gas and an oxygen are introduced, to shape the second conductive film into a capacitor upper electrode;
• etching selectively the dielectric film exposed from the mask in a second atmosphere, into which a second etching gas not-containing the oxygen is introduced, to shape the dielectric film into a capacitor dielectric film;
• and
• etching the first conductive film exposed from the mask in a third atmosphere, into which a third etching gas and the oxygen are introduced, to shape the first conductive film into a capacitor lower electrode.