Loading patent…
AssigneeMattson Thermal Products GmbH
InventorsWerner Blersch, Jochen Urban, Silke Paul, Uwe Ruby, Markus Hauf
Estimating the term…
The invention relates to a method and to a device for thermally treating objects. The aim of the invention is to facilitate a better control of the temperature profile of an object to be thermally treated. To this end, the invention provides a method and a device for thermally treating an object in a heating system, especially for treating semiconductor wafers (2) in a rapid heating system (1). The objects are thermally treated at a predetermined temperature progression and the temperature of the object is controlled via a PID control and a feedforward control that are based on a simulation model of the heating system and the object. Said model consists of individual models of components of the heating system and/or the object. The parameters of at least one of the individual models are monitored during the thermal treatment and the model is adapted to the monitored parameters.
Method for the thermal treatment of objects in a heating unit, especially semiconductor wafers in a rapid heating unit, with which the objects are thermally treated with a prescribed temperature course and the temperature of the object is regulated with a temperature regulation and a forward-acting control that is based upon a simulation model of heating apparatus and object, characterized in that the simulation model includes at least one individual model that includes components of the heating apparatus and/or of the object, and in that at least one parameter of at least one of the individual models is monitored during the thermal treatment and in that the simulation model is adapted to at least one monitored parameter.
Method according to one of the preceding claims, characterized in that parameters of the object that is to be treated, especially the optical characteristics thereof, are monitored.
Method according to one of the preceding claims, characterized in that data transmission times and/or computing times are determined.
Method according to one of the preceding claims, characterized in that temperatures of the object under 400° C. are calculated subsequently.
Apparatus for the thermal treatment of objects (2), especially semiconductor wafers with a heating device (1), especially a rapid heating device, a regulating unit having a PID regulator (47) and a forward-acting regulator (50) that utilizes a simulation model of heating device (1) and object (2), characterized by at least one monitoring unit for the sensing of parameters of components of the heating device (1) and/or or the object (2), which parameters are relevant for the simulation model, for the comparison of the measured parameters with the parameters of the simulation model and for the adaptation of the parameters of the simulation model to the measured parameters.
Dependencies are inferred from the claim text.