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US 2003/0166316 A1Published application
Method of manufacturing field effect transistors
OwnerTakashi Nakamurainventor
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Abstract
A method of supplying deuterium to MOSFET at low cost and supplying deuterium precisely to a determined depth, in a process of supplying deuterium to MOSFET. The method comprises the steps of: forming an oxide film on a silicon substrate, forming a polysilicon electrode film on the oxide film, and supplying deuterium ions by an ion implanter on the interface of the oxide film 4 and the silicon substrate via the polysilicon electrode film.
Claims20
A method of manufacturing a field effect transistor comprising the steps of:
- forming an oxide film on a silicon substrate;
- forming a polysilicon electrode film on the oxide film;
- and
- supplying deuterium ions through the polysilicon electrode film to an interface of the oxide film and the silicon substrate by an ion implanter.
1 more element
A method of manufacturing a field effect transistor comprising the steps of:
- forming an oxide film on a silicon substrate;
- forming a polysilicon electrode film on the oxide film;
- etching the polysilicon electrode film to form a gate electrode part;
- and
- supplying deuterium ions through the gate electrode part to an interface of the oxide film and the silicon substrate by an ion implanter.
2 more elements
Dependencies are inferred from the claim text.