Method of manufacturing a thin film transistor

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• running laser beam that is collected relative to the substrate to irradiate the amorphous semiconductor film with the laser beam and form a crystalline semiconductor film;
• and
• etching the crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+2d)−d−2(n−1)V≦L≦n(D+2d)+d−2nV and 0≦L (n is an integer, 0≦n) when 0<V≦d , V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• running laser beam that is collected relative to the substrate to irradiate the amorphous semiconductor film with the laser beam and form a crystalline semiconductor film;
• and
• etching the crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+V)−V+d≦L≦n(D+V)+d and 0≦L (n is an integer, 0≦n) when d<V, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• running laser beam that is collected relative to the substrate to irradiate the amorphous semiconductor film with the laser beam and form a crystalline semiconductor film;
• and
• etching the crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+2d)−d+(n−1)F≦L≦n (D+2d)+d+nF and 0≦L (n is an integer, 0≦n), (F is a offset, F=|−V|) when V<0, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• subjecting the amorphous semiconductor film to heat treatment to form a first crystalline semiconductor film;
• running laser beam that is collected relative to the substrate to irradiate the first crystalline semiconductor film with the laser beam and form a second crystalline semiconductor film;
• and
• etching the second crystalline semiconductor film to form an active layer, wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+2d)−d≦L≦n(D+2d)+d and 0≦L (n is an integer, 0≦n) when V=0, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• subjecting the amorphous semiconductor film to heat treatment to form a first crystalline semiconductor film;
• running laser beam that is collected relative to the substrate to irradiate the first crystalline semiconductor film with the laser beam and form a second crystalline semiconductor film;
• and
• etching the second crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+2d)−d−2(n−1)V≦L≦n(D+2d)+d−2nV and 0≦L (n is an integer, 0≦n) when 0<V≦d, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• subjecting the amorphous semiconductor film to heat treatment to form a first crystalline semiconductor film;
• running laser beam that is collected relative to the substrate to irradiate the first crystalline semiconductor film with the laser beam and form a second crystalline semiconductor film;
• and
• etching the second crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+V)−V+d≦L≦n (D+V)+d and 0≦L (n is an integer, 0≦n) when d<V, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• subjecting the amorphous semiconductor film to heat treatment to form a first crystalline semiconductor film;
• running laser beam that is collected relative to the substrate to irradiate the first crystalline semiconductor film with the laser beam and form a second crystalline semiconductor film;
• and
• etching the second crystalline semiconductor film to form an active layer,
• wherein the width of a region irradiated with the laser beam is the sum of an effective irradiation region width D, a width d of a region on the left side of the effective irradiation region, and a width d of a region on the right side of the effective irradiation region, and
• wherein the crystalline semiconductor film used for the active layer is formed excluding a region within a distance L, which is expressed by n(D+2d)−d+(n−1)F≦L≦n (D+2d)+d+nF and 0≦L (n is an integer, 0≦n), (F is a offset, F=|−V|) when V<0, V being the overlap width of adjacent laser beams during laser beam scanning, L being the distance from the origin in the direction perpendicular to the laser beam scanning direction, the origin being one point in an end of the region irradiated with the laser beam on an irradiation object.

A method of manufacturing a thin film transistor, comprising:

• forming an amorphous semiconductor film on a substrate;
• forming a first alignment marker on the amorphous semiconductor film;
• running laser beam that is collected relative to the substrate to irradiate the amorphous semiconductor film with the laser beam and form a crystalline semiconductor film;
• placing a mask that has a second alignment marker formed to coincide with the first alignment marker on the crystalline semiconductor film;
• and
• etching the crystalline semiconductor film to form an active layer,
• wherein the laser beam irradiation is started from an arbitrary point determined with the first alignment marker as the reference.

A method of manufacturing a semiconductor device comprising:

• forming an amorphous semiconductor film over a substrate;
• scanning a first irradiation area of the amorphous semiconductor film with a laser beam to crystallize the first irradiation area of the amorphous semiconductor film wherein the first irradiation area has an elongated shape extending in one direction, and the first irradiation area has a effective irradiation region extending along the one direction and a pair of second regions between the effective irradiation region and both side edges of the first irradiation area;
• and
• forming at least one semiconductor island by patterning the crystallized semiconductor film wherein the at least one semiconductor island is located in the effective irradiation region, wherein the semiconductor island is not located in the pair of second regions.