Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
AssigneeSony Corporation
InventorsMasato Imai, Akira Maehara, Yoko Fukunaga
Life of this patent
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Abstract
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.
Claims18
A mask for photolithography comprising:
- a light-shielding area;
- and
- a plurality of transmission areas having different light transmittances;
- wherein the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer.
A method of forming a thin film using a mask for photolithography comprising a light-shielding area and a plurality of transmission areas having different light transmittances, wherein, in the mask for photolithography, the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer.
A method of producing a liquid crystal display device comprising the step of:
- carrying out a photolithography process in which exposure is performed using a mask for photolithography comprising a light-shielding area and a plurality of transmission areas having different light transmittances, wherein, in the mask for photolithography, the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer.
A liquid crystal display device comprising:
- a substrate having a thin-film pattern formed thereon by exposure using a mask for photolithography comprising a light-shielding area and a plurality of transmission areas having different light transmittances, wherein, in the mask for photolithography, the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is between (−¼+2 m).π and (¼+2 m).π inclusive, where m is an integer.
A mask for photolithography comprising:
- a light-shielding area;
- and
- a plurality of transmission areas;
- wherein the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is arbitrarily set, so that a thin-film pattern in which the number of steps thereof is equal to or greater than the number of transmission areas is formed.
A method of forming a thin film comprising:
- an exposure step using a mask for photolithography in order to form a thin-film pattern in which the number of steps thereof is equal to or greater than the number of transmission areas, wherein the mask comprises a light-shielding area and the plurality of transmission areas, and wherein the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is arbitrarily set.
A method of producing a liquid crystal display device comprising the step of:
- carrying out a photolithography process in which exposure is performed using a mask for photolithography in order to form a thin-film pattern in which the number of steps thereof is equal to or greater than the number of transmission areas, wherein the mask for photolithography comprises a light-shielding area and the plurality of transmission areas, and wherein the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is arbitrarily set.
A liquid crystal display device comprising:
- a substrate having formed thereon a thin-film pattern in which the number of steps thereof is equal to or greater than the number of transmission areas by exposure using a mask for photolithography comprising a light-shielding area and the plurality of transmission areas, wherein the phase difference of lights passing through adjacent transmission areas of the plurality of transmission areas is arbitrarily set.
Dependencies are inferred from the claim text.