Method of reducing stress induced defects in an HDP-CVD process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Sheng Lin, Jui-Hei Huang, Chi-Sheng Lo, Long-Siang Chuang
Life of this patent
Estimating the term…
Abstract
A method of reducing stress induced defects in a substrate according to an HDP-CVD process including providing a substrate for depositing a layer of material according to an HDP-CVD process; igniting a plasma for carrying out an HDP-CVD process; adjusting plasma operating parameters to achieve a first deposition-sputter ratio with respect to the substrate; depositing a first portion of the layer of material according to a first range of substrate temperatures; and, depositing at least a second portion of the layer of material according to at least a second range of substrate temperatures.
Claims21
A method of reducing stress induced defects in a substrate according to an HDP-CVD process comprising the steps of:
- providing a substrate for depositing a layer of material according to an HDP-CVD process;
- igniting a plasma for carrying out an HDP-CVD process;
- adjusting plasma operating parameters to achieve a first deposition-sputter ratio with respect to the substrate;
- depositing a first portion of the layer of material according to a first range of substrate temperatures;
- and
- depositing at least a second portion of the layer of material according to at least a second range of substrate temperatures.
A method of reducing stress induced defects present in a semiconductor wafer following an HDP-CVD process comprising the steps of:
- providing a semiconductor wafer for depositing a layer of material according to an HDP-CVD process;
- depositing a first portion of the layer of material over a first range of deposition temperatures according to a first deposition-sputter ratio;
- cooling the semiconductor wafer;
- and
- depositing at least a second portion of the layer of material over at least a second range of deposition temperatures according to at least a second deposition-sputter ratio.
Dependencies are inferred from the claim text.