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AssigneeASM International N.V.
InventorsTitta Aaltonen, Petra Alen, Mikko Ritala, Markku Leskela
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The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.
A process for producing an electrically conductive noble metal thin film on a substrate in a reactor by atomic layer deposition, comprising:
4 The process of claim 3, wherein the noble metal is selected from the group consisting of ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum and gold.
A process for producing a noble metal thin film on a substrate comprising:
A process for producing a capacitor in an integrated circuit, comprising:
A method of producing an ultra-high density magnetic recording device comprising:
Dependencies are inferred from the claim text.