Thin film transistor panel
AssigneeChi Mei Optoelectronics Corp.
InventorCheng Chi Wang
Life of this patent
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Abstract
A thin film transistor panel includes a gate line with a gate electrode on a substrate, a gate insulating layer on the gate line, a semiconductor layer on the gate insulating layer, a conductive pattern layer with source and drain electrodes spaced apart on the semiconductor layer, a passivation layer on the semiconductor layer and the conductive pattern layer, and a plurality of pixel electrodes on the passivation layer. The thin film transistor panel is characterized in that the conductive pattern layer is formed from composite metallic layers including Mo/Ag—Al alloy/Mo. Furthermore, the gate line may be formed from a gate metal layer including an Ag—Al alloy layer and a molybdenum layer. The present invention further provides a sputtering target of Ag—Al alloy for forming the Ag—Al alloy layer.
Claims20
A thin film transistor panel comprising:
- a gate line with a gate electrode on a substrate;
- a gate insulating layer on the gate line;
- a semiconductor layer on the gate insulating layer;
- a conductive pattern layer with source and drain electrodes spaced apart on the semiconductor layer, the conductive pattern layer comprising a first molybdenum layer, an Ag—Al alloy layer on the first molybdenum layer and a second molybdenum layer on the Ag—Al alloy layer;
- a passivation layer on the semiconductor layer and the conductive pattern layer, the passivation layer having a plurality of contact holes;
- and
- a plurality of pixel electrodes on the passivation layer, each of the pixel electrodes extending into one of the contact holes to contact the molybdenum layer.
A liquid crystal display, comprising:
- a top plate comprising a transparent electrode;
- a bottom plate comprising reflective electrodes of Ag—Al alloy;
- and
- a liquid crystal layer sandwiched between the top plate and the bottom plate,
- wherein an image is generated by the liquid crystal display when ambient light is incident to the surface of the top plate.
A sputtering target for forming a metal film, the sputtering target comprises an Ag—Al alloy.
A thin film transistor panel comprising:
- a gate line with a gate electrode on a substrate, the gate line comprising an Ag—Al alloy layer on the substrate and a molybdenum layer on the Ag—Al alloy layer;
- a gate insulating layer on the gate line;
- a semiconductor layer on the gate insulating layer;
- a conductive pattern layer with spaced apart source and drain electrodes on the semiconductor layer;
- a passivation layer on the semiconductor layer and the conductive pattern layer, the passivation layer having a plurality of contact holes;
- and
- a plurality of pixel electrodes on the passivation layer, each of the pixel electrodes extending into one of the contact holes and directly contacting the molybdenum layer.
Dependencies are inferred from the claim text.