Method and apparatus for wafer-level testing of semiconductor laser
AssigneeNovalux, Inc.
InventorsJames Harrison, David Leslie Heald
Life of this patent
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Abstract
A system and method for manufacturing and wafer-level testing properties of a wafer comprises a chuck receiving a wafer to be tested and a pump light source directing an output beam toward selected locations on a wafer received on the chuck in combination with a laser light detector detecting light emitted from the wafer and a pump beam aiming mechanism selectively varying a position at which the pump light source output beam enters the wafer.
Claims31
An apparatus for testing properties of a semiconductor laser wafer, the apparatus comprising:
- a chuck receiving a wafer to be tested;
- a pump light source directing a pump light beam toward selected locations on the wafer;
- a light detector detecting light emitted from the wafer;
- and
- a pump beam aiming mechanism selectively varying a position at which the pump light beam enters the wafer.
A method of wafer-level testing semiconductor laser devices, comprising the steps of:
- positioning a wafer to be tested in a predetermined position relative to a pump light source;
- optically pumping preselected regions of the wafer with the pump light source;
- and
- analyzing laser light emitted from each of the preselected regions to determine lasing characteristics of the preselected regions.
A method of manufacturing semiconductor laser devices on a wafer, comprising:
- growing epitaxial layers on the wafer, the epitaxial layers forming at least one mirror and an active gain region;
- optically pumping selected regions of the active gain region with a pump light source;
- analyzing laser light emitted from each of the regions in response to the optical pumping;
- and
- identifying the regions having acceptable characteristics based on the analysis of the emitted light.
A method of manufacturing semiconductor laser devices, comprising:
- growing epitaxial layers on a substrate defining at least a mirror region and an active gain region;
- optically pumping selected portions of the active gain region with a pump light source;
- analyzing light emitted from each of the selected portions in response to the optical pumping to determine laser-related characteristics of the epitaxial layers;
- and
- performing post-epitaxial growth processing on at least one of the substrate and the epitaxial layers.
A method of manufacturing semiconductor laser devices on a wafer, comprising:
- growing epitaxial layers on the wafer, the epitaxial layers forming at least one mirror and an active gain region;
- optically pumping selected regions of the active gain region with a pump light source;
- analyzing laser light emitted from each of the selected regions in response to the optical pumping;
- and
- identifying the wafer for sorting based on the analysis of the emitted light.
Dependencies are inferred from the claim text.