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US 2003/0164530 A1Published application
Hall effect sensor
AssigneeCentre National de la Recherche Scientifique - CNRS, a corporation of France
InventorsJean-Louis Robert, Julien Pernot, Jean Camassel, Sylvie Contreras
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Abstract
A Hall effect sensor formed in a multilayer structure including a thin active layer deposited on a substrate, wherein the substrate is an insulating, semi-insulating or semiconductor material of type p− or n+, respectively, to electrically isolate the active layer of the substrate and wherein the active layer is a weakly doped semiconductor material of type n− or p− in an exhaustion regime.
Claims13
A Hall effect sensor formed in a multilayer structure comprising:
- a thin active layer deposited on a substrate, wherein the substrate is an insulating, semi-insulating or semiconductor material of type p− or n+, respectively, to electrically isolate the active layer of the substrate and wherein the active layer is a weakly doped semiconductor material of type n− or p− in an exhaustion regime.
Dependencies are inferred from the claim text.