US 2003/0164525 A1Published application

Gate structure and method

AssigneeTexas Instruments Incorporated

InventorsAntonio L. P. Rotondaro, Luigi Colombo, Mark R. Visokay, Rajesh Khamankar, Douglas E. Mercer

Life of this patent

Estimating the term…

A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.

Dependent claims

An integrated circuit, comprising:

(a) a plurality of interconnected transistors, said transistors with gate dielectrics of nitrided silicate.

Dependencies are inferred from the claim text.

H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates
H10D 64/693
Characterised by the insulator, e.g. by the gate insulator: the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

From the US filing history. Foreign family members aren’t listed.

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