Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorsRolf Stephan, Manfred Horstmann, Karsten Wieczorek
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Abstract
In a method for fabricating a semiconductor device different types of a metal-semiconductor compound are formed on or in at least two different conductive semiconductor regions so that for each semiconductor region the metal-semiconductor compound region may be formed to obtain an optimum overall performance of the semiconductor device. On one of the two semiconductor regions, the metal-semiconductor compound is formed of at least two different metal layers, whereas the metal-semiconductor compound in or on the other semiconductor region is formed from a single metal layer.
Claims25
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having formed thereon at least one first conductive semiconductor region and at least one second conductive semiconductor region;
- depositing a first metal layer on the at least one first and second conductive semiconductor regions;
- forming a mask layer on the substrate to expose the at least one second conductive semiconductor region;
- removing the first metal layer from the at least one second conductive semiconductor region;
- heat treating the substrate to form a first metal-semiconductor compound on the at least one first conductive semiconductor region;
- depositing a second metal layer over the at least one first and second conductive semiconductor regions;
- and
- heat treating the substrate to form a second metal-semiconductor compound on the at least one second conductive semiconductor region.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having formed thereon at least one first conductive semiconductor region and at least one second conductive semiconductor region;
- depositing a first metal layer on the at least one first and second conductive semiconductor regions;
- selectively removing the first metal layer from the at least one second conductive semiconductor region;
- depositing a second metal layer on the at least one first and second conductive semiconductor regions;
- and
- heat treating the substrate to form a first and a second metal-semiconductor compound in the at least one first conductive semiconductor region and a second metal-semiconductor compound in the at least one second conductive semiconductor region.
A semiconductor device comprising:
- a first conductive semiconductor region;
- a second conductive semiconductor region;
- the first and the second conductive semiconductor regions formed in a common layer;
- a first metal-semiconductor compound formed in the first conductive semiconductor region;
- and
- a second metal-semiconductor compound formed in the first and second conductive semiconductor regions.
Dependencies are inferred from the claim text.