Semiconductor device

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor, and a pixel region comprising a second thin film transistor,
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer, and the first active layer is formed by irradiating a semiconductor film with an energy beam to form a molten band and by continuously scanning the molten band in a direction of channel length for crystallization, and
• wherein the second thin film transistor comprises a second active layer formed by adding a metal element to a semiconductor film and crystallizing the semiconductor film by heating.

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor;
• and
• a pixel region comprising a second thin film transistor;
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer, and the first active layer is formed by irradiating a semiconductor film with an energy beam to form a molten band and by continuously scanning the molten band in a direction of channel length for crystallization, and
• wherein the second thin film transistor comprises a second active layer formed by irradiating a semiconductor film with a pulse-like energy beam for crystallization.

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor;
• and
• a pixel region comprising a second thin film transistor;
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer, and the first active layer is formed by a polycrystalline semiconductor in which crystalline grains are extending in the channel direction, and
• wherein the second thin film transistor comprises a second active layer formed by a polycrystalline semiconductor in which shape of polycrystalline grains have no anisotropy in the channel direction.

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor;
• and
• a pixel region comprising a second thin film transistor;
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer, and the first active layer is formed by a polycrystalline semiconductor in which crystalline grains are extending in the channel direction, and
• wherein the second thin film transistor comprises a second active layer, and the second active layer is formed by a polycrystalline semiconductor in which shape of polycrystalline grains have an anisotropy in the channel direction which is weaker than that of the first active layer.

A semiconductor device comprising:

• a scanning line drive circuit;
• and
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first film transistor, and
• a pixel region comprising a secondfilm transistor;
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first film transistor comprises a first active layer formed by a polycrystalline semiconductor having an electric anisotropy in the channel direction, and
• wherein the second thin film transistor comprises a second active layer formed by a polycrystalline semiconductor without having an electric anisotropy in the channel direction.

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor;
• and
• a pixel region comprising a second thin film transistor;
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer formed by a polycrystalline semiconductor having an electric anisotropy in the channel direction, and
• wherein the second thin film transistor comprises a second active layer formed by a polycrystalline semiconductor having an electric anisotropy in the channel direction which is weaker than that of the first active layer.

A semiconductor device comprising:

• a scanning line drive circuit;
• a signal line drive circuit, wherein at least one of the scanning line drive circuit or the signal line drive circuit comprises a first thin film transistor;
• and
• a pixel region comprising a second thin film transistor,
• wherein the pixel region, the a scanning line drive circuit, and the a signal line drive circuit are provided on a same substrate,
• wherein the first thin film transistor comprises a first active layer formed by a polycrystalline semiconductor in which polycrystalline grains are extending in the channel direction, and having a grain size of from 0.5 to 100 μm in the direction of short diameter thereof and a grain size of from 3 to 10,000 μm in the direction of long diameter thereof, and
• wherein the second thin film transistor comprises a second active layer formed by a polycrystalline semiconductor in which polycrystalline grain have a grain size of from 0.01 μm to 10 μm.