Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTadashi Iijima
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor device comprising a substrate, a first region provided on the substrate and comprising a first insulating portion which includes an insulating film having a relative dielectric constant of at most 3.0 and a conductive portion which is provided in the first insulating portion, a second region provided on the substrate, located adjacent to the first region in a direction parallel to a major surface of the substrate and comprising a second insulating portion which is located adjacent to the first insulating portion in the direction and which includes no insulating film having a relative dielectric constant of at most 3.0, and a pad provided on the second region and electrically connected to the conductive portion.
Claims20
A semiconductor device comprising:
- a substrate;
- a first region provided on the substrate and comprising a first insulating portion which includes an insulating film having a relative dielectric constant of at most 3.0 and a conductive portion which is provided in the first insulating portion;
- a second region provided on the substrate, located adjacent to the first region in a direction parallel to a major surface of the substrate and comprising a second insulating portion which is located adjacent to the first insulating portion in said direction and which includes no insulating film having a relative dielectric constant of at most 3.0;
- and
- a pad provided on the second region and electrically connected to the conductive portion.
A method of manufacturing a semiconductor device, comprising:
- stacking a plurality of insulating films each having a relative dielectric constant of at most 3.0 in first and second regions which are provided on a substrate and which are located adjacent to each other in a direction parallel to a major surface of the substrate;
- removing those parts of the plurality of insulating films, which lie in the second region, to make a hole in the plurality of insulating films;
- forming an insulating film having a relative dielectric constant greater than 3.0 in the hole;
- and
- forming a pad above the insulating film having a relative dielectric constant greater than 3.0.
Dependencies are inferred from the claim text.