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US 2003/0164515 A1Published application
Carbon-containing interfacial layer for phase-change memory
AssigneeOvonyx, Inc.
InventorDaniel Xu
Life of this patent
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Abstract
A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
Claims30
A method comprising:
- forming a carbon-containing interfacial layer on a semiconductor;
- and
- forming a phase-change material over said carbon-containing interfacial layer.
A memory comprising:
- a surface;
- a carbon-containing interfacial layer over said surface;
- and
- a phase-change material over said carbon-containing interfacial layer.
1 more element
An electronic device comprising:
- a surface;
- a carbon-containing interfacial layer over said surface;
- and
- a phase-change material over said carbon-containing interfacial layer.
1 more element
A memory comprising:
- a semiconductor substrate;
- a silicon carbide layer positioned over said substrate;
- and
- a phase-change material over said silicon carbide layer.
1 more element
Dependencies are inferred from the claim text.