Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same

A silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET), comprising:

• a silicon carbide substrate;
• an epitaxial layer formed on the silicon carbide substrate;
• a source region, a drain region, and a drift region implanted in the epitaxial layer;
• a gate electrode formed over the epitaxial layer;
• and
• wherein the drift region is self-aligned with the gate electrode, and wherein the source region is non self-aligned with the gate electrode.

A method for forming a silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET), comprising the steps of:

• implanting a source region and a drain region in an epitaxial layer;
• annealing the implanted source region and the implanted drain region;
• forming a gate oxide layer and a gate electrode over the epitaxial layer;
• implanting a drift region in the epitaxial layer;
• and
• annealing the implanted drift region.

A method for forming a silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET), comprising the steps of:

• implanting a source region and a drain region in an epitaxial layer, wherein the epitaxial layer is formed on a silicon carbide substrate;
• annealing the implanted source region and the implanted drain region at approximately 1600° C.;
• forming a gate oxide layer over the epitaxial layer after the source region and the drain region are annealed;
• forming a gate electrode on the gate oxide layer;
• implanting a drift region in the epitaxial layer after the gate contact is formed;
• and
• annealing the implanted drift region at approximately 1250° C.