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US 2003/0164504 A1Published application
Light emitting diode device
AssigneeSharp Kabushiki Kaisha
InventorKazuaki Kaneko
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Abstract
Light emitting diode (LED) device has a P-type GaAlAs cladding layer, a P-type GaAlAs active layer, an N-type GaAlAs cladding layer and a circular electrode formed in sequence on a P-type GaAs substrate and mesa etched. An area of a PN contact surface between the P-type active layer and the N-type cladding layer is between 0.053 mm2 and 0.058 mm2 which allows qualification criteria of the LED device for communications to be easily satisfied.
Claims7
An LED device comprising:
- a semiconductor substrate;
- a first conductivity-type cladding layer on the semiconductor substrate;
- an active layer on the first conductivity-type cladding layer;
- and
- a second conductivity-type cladding layer on active layer, wherein
- an area of a contact surface between the active layer and the second conductivity-type cladding layer is 0.053 mm2 or more and 0.058 mm2or less.
3 more elements
Dependencies are inferred from the claim text.