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US 2003/0164500 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkira Tsunoda, Shunpei Yamazaki, Jun Koyama
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Abstract
A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.
Claims14
A semiconductor device, comprising:
- a first electrode;
- a semiconductor film;
- a first insulating film and a second insulating film provided between the first electrode and the semiconductor film;
- a second electrode;
- and
- a third insulating film provided between the semiconductor film and the second electrode,
- wherein the semiconductor film is provided over a flat surface of the second insulating film, a cross portion where the first electrode and the second electrode cross the semiconductor film at a same position is formed, and the first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.
4 more elements
A semiconductor device, comprising:
- a first electrode and a first interconnection;
- a semiconductor film;
- a first insulating film and a second insulating film provided between the semiconductor film and the first electrode;
- a third insulating film provided between the semiconductor film and the second electrode and and between the semiconductor film and the second interconnection;
- and
- a fourth insulating film provided over the second electrode and the second interconnection,
- wherein the semiconductor films is provided over a flat surface of the second insulating film, a cross portion where the first electrode and the second electrode cross the semiconductor film at a same position is formed, and the first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion, and the first interconnection and the semiconductor film are connected to each other, through a first opening made in the first to fourth insulating films and through a second opening made in the third insulating film and the fourth insulating film, by means of a third electrode.
4 more elements
A semiconductor device, comprising:
- a first electrode and a first interconnection;
- a semiconductor film;
- a first insulating film and a second insulating film provided between the semiconductor film and the first electrode;
- a second electrode and a second interconnection;
- a third insulating film provided between the semiconductor film and the second electrode and between the semiconductor film and the second interconnection;
- and
- a fourth insulating film provided over the second electrode and the second interconnection,
- wherein the semiconductor film is provided over a flat surface of the second insulating film, a cross portion where the first electrode and the second electrode cross the semiconductor film at a same position is formed, and the first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion, the first interconnection and a first impurity region of one-conduction-type provided in the semiconductor film are connected to each other, through a first opening made in the first to fourth insulating films and through a second opening made in the third insulating film and the fourth insulating film, by a third electrode, and a fourth electrode is connected, through a third opening in the third insulating film and the fourth insulating film, to a second impurity region of the one-conduction-type provided in the semiconductor films.
5 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode and a first interconnection over an insulating surface;
- forming a first insulating film and a second insulating film over the first electrode and the first interconnection, making the second insulating film flat by chemical-mechanical polishing;
- forming a semiconductor film over the second insulating film;
- forming a third insulating film over the semiconductor film;
- making an opening in the first to third insulating films;
- exposing a part of the first electrode by the opening;
- forming a second electrode and a second interconnection over the third insulating film;
- and
- connecting the first electrode and the second electrode to each other through the opening.
6 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode and a first interconnection over an insulating surface;
- forming a first insulating film and a second insulating film over the first electrode and the first interconnection;
- making the second insulating film flat by chemical-mechanical polishing;
- forming a semiconductor film over the second insulating film;
- forming a third insulating film over the semiconductor film;
- making a first opening in the first to third insulating films;
- exposing a part of the first electrode by the first opening;
- forming a second electrode and a second interconnection over the third insulating film;
- connecting the first electrode and the second electrode to each other through the first opening;
- forming a forth insulating film over the second electrode and the second interconnection;
- making a second opening in the first to fourth insulating films;
- exposing a part of the first interconnection by the second opening;
- making a third opening in the third and fourth insulating films;
- exposing a part of the semiconductor film by the third opening;
- forming a third electrode on the fourth insulating film;
- and
- connecting the first interconnection and the semiconductor film to each other through the second opening and the third opening.
14 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode and a first interconnection over an insulating surface;
- forming a first insulating film and a second insulating film over the first electrode and the first interconnection;
- making the second insulating film flat by chemical-mechanical polishing;
- forming a semiconductor film over the second insulating film;
- forming a third insulating film over the semiconductor film;
- making a first opening in the first to third insulating films;
- exposing a part of the first electrode by the first opening;
- forming a second electrode and a second interconnection over the third insulating film;
- connecting the first electrode and the second electrode to each other through the first opening,
- forming a pair of one-conduction-type impurity regions in the semiconductor film;
- forming a fourth insulating film over the second electrode and the second interconnection;
- making a second opening in the first to fourth insulating films;
- exposing a part of the first interconnection by the second opening;
- making a third opening in the third and fourth insulating films;
- exposing a part of one of the one-conduction-type impurity regions by the third opening;
- forming a third electrode over the fourth insulating film;
- and
- connecting the first interconnection and the one of the one-conduction-type regions to each other through the second opening and the third opening.
15 more elements
Dependencies are inferred from the claim text.