# US 2003/0164498 A1 · Thin-film transistor substrate and liquid crystal display > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2003/0164498 A1 - Document ID: US20030164498A1 - Status: Published application - Kind: A1 - Application number: 10/385,377 - Filed: 2003-03-07 - Published: 2003-09-04 - Earliest claimed: 1999-03-16 - Assignees: LG. Philips LCD Co., Ltd. - Inventors: Chae Gee Sung; Jo Gyoo Chul; Makoto Sasaki; Kazuyuki Arai - Web page: https://patentgrep.com/patent/US20030164498A1 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/13458: {Terminal pads} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6737: {characterised by the electrode materials} - H10D 30/6743: {Silicon} - H10D 86/40: characterised by multiple TFTs - H10D 86/441: {Interconnections, e.g. scanning lines} - G02F 1/136295: {Materials; Compositions; Manufacture processes} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps. ## Claims ### Claim 1 A thin-film transistor substrate comprising a source line and a source terminal comprising one of indium tin zinc oxide and indium zinc oxide, wherein the source line is directly connected to the source terminal. ### Claim 2 (depends on 1) A thin-film transistor substrate according to claim 1, wherein the source line comprises any one selected from the group consisting of aluminum, copper, molybdenum, chromium, titanium, tantalum, tungsten, and alloys thereof. ### Claim 3 A thin-film transistor substrate comprising a gate line and a gate terminal comprising one of indium tin zinc oxide and indium zinc oxide, wherein the gate line is directly connected to the gate terminal. ### Claim 4 (depends on 3) A thin-film transistor substrate according to claim 3, wherein the gate line comprises any one selected from the group consisting of aluminum, copper, molybdenum, chromium, titanium, tantalum, tungsten, and alloys thereof. ### Claim 5 A thin-film transistor substrate comprising drain electrodes constituting thin-film transistors for switching a plurality of pixel electrodes and pixel electrodes comprising one of indium tin zinc oxide and indium zinc oxide, wherein each of the drain electrodes is directly connected to each of the pixel electrodes. ### Claim 6 (depends on 5) A thin-film transistor substrate according to claim 5, wherein the drain electrodes comprise any one selected from the group consisting of aluminum, copper, molybdenum, chromium, titanium, tantalum, tungsten, and alloys thereof. ### Claim 7 A thin-film transistor substrate comprising: a substrate which is insulating at least at the surface thereof; a plurality of gate lines and source lines in a matrix formed on the substrate; pixel electrodes provided in regions surrounded by the gate lines and the source lines; and thin-film transistors, each being connected to the corresponding pixel electrode, the corresponding gate line, and the corresponding source line and functioning as a switching element for the corresponding pixel electrode; wherein each gate line is directly connected to a gate terminal comprising one of indium tin zinc oxide and indium zinc oxide, each source line is directly connected to a source terminal comprising one of indium tin zinc oxide and indium zinc oxide; the pixel electrodes comprise one of indium tin zinc oxide and indium zinc oxide, and a drain electrode of each thin-film transistor is directly connected to the corresponding pixel electrode. ### Claim 8 (depends on 1) A thin-film transistor substrate according to claim 1, wherein the indium tin zinc oxide is a compound oxide comprising indium oxide, tin oxide, and zinc oxide, the zinc content with respect to the total amount of zinc, indium, and tin is 1 atomic percent to 9 atomic percent, the atomic ratio of tin to zinc is at least 1, the tin content with respect to the total amount of zinc, indium, tin is 20 atomic percent or less, and the compound oxide exhibits at least partially crystallinity. ### Claim 9 (depends on 3) A thin-film transistor substrate according to claim 3, wherein the indium tin zinc oxide is a compound oxide comprising indium oxide, tin oxide, and zinc oxide, the zinc content with respect to the total amount of zinc, indium, and tin is 1 atomic percent to 9 atomic percent, the atomic ratio of tin to zinc is at least 1, the tin content with respect to the total amount of zinc, indium, tin is 20 atomic percent or less, and the compound oxide exhibits at least partially crystallinity. ### Claim 10 (depends on 5) A thin-film transistor substrate according to claim 5, wherein the indium tin zinc oxide is a compound oxide comprising indium oxide, tin oxide, and zinc oxide, the zinc content with respect to the total amount of zinc, indium, and tin is 1 atomic percent to 9 atomic percent, the atomic ratio of tin to zinc is at least 1, the tin content with respect to the total amount of zinc, indium, tin is 20 atomic percent or less, and the compound oxide exhibits at least partially crystallinity. ### Claim 11 (depends on 7) A thin-film transistor substrate according to claim 7, wherein the indium tin zinc oxide is a compound oxide comprising indium oxide, tin oxide, and zinc oxide, the zinc content with respect to the total amount of zinc, indium, and tin is 1 atomic percent to 9 atomic percent, the atomic ratio of tin to zinc is at least 1, the tin content with respect to the total amount of zinc, indium, tin is 20 atomic percent or less, and the compound oxide exhibits at least partially crystallinity. ### Claim 12 (depends on 8) A thin-film transistor substrate according to claim 8, wherein the zinc content with respect to the total amount of zinc, indium, and tin is 2 atomic percent to 7 atomic percent, and the tin content with respect to the total amount of zinc, indium, and tin is 5 atomic percent to 10 atomic percent. ### Claim 13 (depends on 9) A thin-film transistor substrate according to claim 9, wherein the zinc content with respect to the total amount of zinc, indium, and tin is 2 atomic percent to 7 atomic percent, and the tin content with respect to the total amount of zinc, indium, and tin is 5 atomic percent to 10 atomic percent. ### Claim 14 (depends on 10) A thin-film transistor substrate according to claim 10, wherein the zinc content with respect to the total amount of zinc, indium, and tin is 2 atomic percent to 7 atomic percent, and the tin content with respect to the total amount of zinc, indium, and tin is 5 atomic percent to 10 atomic percent. ### Claim 15 (depends on 11) A thin-film transistor substrate according to claim 11, wherein the zinc content with respect to the total amount of zinc, indium, and tin is 2 atomic percent to 7 atomic percent, and the tin content with respect to the total amount of zinc, indium, and tin is 5 atomic percent to 10 atomic percent. ### Claim 16 (depends on 1) A liquid crystal display comprising a pair of substrates and a liquid crystal held between the pair of substrates, one of the pair of substrates being a thin-film transistor substrate according to claim 1. ### Claim 17 (depends on 3) A liquid crystal display comprising a pair of substrates and a liquid crystal held between the pair of substrates, one of the pair of substrates being a thin-film transistor substrate according to claim 3. ### Claim 18 (depends on 5) A liquid crystal display comprising a pair of substrates and a liquid crystal held between the pair of substrates, one of the pair of substrates being a thin-film transistor substrate according to claim 5. ### Claim 19 (depends on 7) A liquid crystal display comprising a pair of substrates and a liquid crystal held between the pair of substrates, one of the pair of substrates being a thin-film transistor substrate according to claim 7.