Polythiophenes and devices thereof
AssigneeXerox Corporation
InventorsBeng S. Ong, Ping Liu, Yiliang Wu, Yu Qi
Life of this patent
Estimating the term…
Abstract
An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D 1 wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
Claims34
An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D
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- wherein A is a side chain;
- B is hydrogen or a side chain;
- and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
A thin film transistor device comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer, a semiconductor layer comprised of a polythiophene represented by Formula (III)
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- wherein A is a long side chain;
- B is hydrogen or a short side chain;
- and D is a divalent segment;
- a and c represent the number of A-substituted thienylenes;
- b is the number of B-substituted thienylene units and is from 0 to about 6;
- d is 0 or 1;
- and n is the degree of polymerization or the number of the monomer segments in the polythiophene.
Dependencies are inferred from the claim text.